Design Method of on chip Medium and Low Voltage Full Isolation DDSCR Based on BCD Process

As the importance of electrostatic discharge (ESD) protection capabilities gains increasing market recognition, traditional on-chip ESD devices are progressively failing to meet the growing ESD protection requirements for ports. To enhance product competitiveness, it has become imperative to improve the performance of on-chip ESD devices, particularly in automotive electronics. A series of customized requirements for on-chip ESD protection in applications such as in-vehicle bus systems, which demand substrate-direction voltage withstand capabilities, necessitates that such devices possess full isolation from the substrate. Addressing these port protection requirements, this paper proposes a universal modification approach based on standard devices in BCD (BipolarCMOS-DMOS) processes. This methodology enables designers to develop fully isolated Dual-Directional Silicon-Controlled Rectifier (DDSCR) structures that comply with port application requirements using standard device structure.